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APT102GA60B2 APT102GA60L
600V High Speed PT IGBT
POWER MOS 8(R) is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency.
APT102GA60B2
APT102GA60L
Single die IGBT
FEATURES
* Fast switching with low EMI * Very Low Eoff for maximum efficiency * Ultra low Cres for improved noise immunity * Low conduction loss * Low gate charge * Increased intrinsic gate resistance for low EMI * RoHS compliant
TYPICAL APPLICATIONS
* ZVS phase shifted and other full bridge * Half bridge * High power PFC boost * Welding * UPS, solar, and other inverters * High frequency, high efficiency industrial
Absolute Maximum Ratings
Symbol
Vces IC1 IC2 ICM VGE PD SSOA TJ, TSTG TL
Parameter
Collector Emitter Voltage Continuous Collector Current @ TC = 25C Pulsed Collector Current 2 Gate-Emitter Voltage
3 1
Ratings
600 183 102 307 30 780 307A @ 600V -55 to 150 300
Unit
V
Continuous Collector Current @ TC = 100C
A
V W
Total Power Dissipation @ TC = 25C Switching Safe Operating Area @ TJ = 150C Operating and Storage Junction Temperature Range Lead Temperature for Soldering: 0.063" from Case for 10 Seconds
C
Static Characteristics
Symbol
VBR(CES) VCE(on) VGE(th) ICES IGES
TJ = 25C unless otherwise specified
Test Conditions
VGE = 0V, IC = 250A VGE = 15V, IC = 62A VCE = 600V, VGE = 0V TJ = 25C TJ = 125C 3 TJ = 25C TJ = 125C
Parameter
Collector-Emitter Breakdown Voltage Collector-Emitter On Voltage Gate Emitter Threshold Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current
Min
600
Typ
2.0 1.9 4.5
Max
2.5 6 1000 5000 100
Unit
V
VGE =VCE , IC = 1mA
A nA
052-6329 Rev B 2 - 2009
VGS = 30V
Thermal and Mechanical Characteristics
Symbol
RJC WT Torque
Characteristic
Junction to Case Thermal Resistance Package Weight Mounting Torque (TO-247 Package), 4-40 or M3 screw Microsemi Website - http://www.microsemi.com
Min
-
Typ
5.9
Max
0.16 -
Unit
C/W g in*lbf
10
Dynamic Characteristics
Symbol
Cies Coes Cres Qg4 Qge Qgc SSOA td(on) tr td(off) tf Eon2 Eoff7 td(on tr td(off) tf Eon2 Eoff7
TJ = 25C unless otherwise specified
Test Conditions
Capacitance VGE = 0V, VCE = 25V f = 1MHz Gate Charge VGE = 15V VCE= 300V IC = 62A TJ = 150C, RG = 4.75, VGE = 15V, L= 100uH, VCE = 600V
Inductive Switching (25C) IGBT and Diode
APT102GA60B2_L
Min Typ
8170 630 78 294 56 106 307 28 37 212 101 1354 1614 27 37 247 142 2106 1852 J ns J ns nC pF
Parameter
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate- Collector Charge Switching Safe Operating Area Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy
Max
Unit
A
VCC = 400V VGE = 15V IC = 62A RG = 4.75 TJ = +25C
Inductive Switching (125C) IGBT and Diode
VCC = 400V VGE = 15V IC = 62A RG = 4.75 TJ = +125C
1 Continuous current limited by package lead temperature. 2 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 3 Pulse test: Pulse Width < 380s, duty cycle < 2%. 4 See Mil-Std-750 Method 3471. 5 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 6 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the clamping diode. 7 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein.
052-6329 Rev B 2 - 2009
Typical Performance Curves
150 125 TJ= 125C 100 TJ= 25C 75 50 25 0 TJ= 150C
V
GE
APT102GA60B2_L
350 15V 13V 11V 300 IC, COLLECTOR CURRENT (A) 250 200 150 100 50 0 9V
= 15V
TJ= 55C
IC, COLLECTOR CURRENT (A)
10V
8V 7V 6V 0 4 8 12 16 20 24 28 32 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 25C)
I = 62A C T = 25C
J
400 350 IC, COLLECTOR CURRENT (A) 300 250 200 150 100 50 0
0 1 2 3 4 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25C) VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
16 14 12 10 8 6 4 2 0
VCE = 120V VCE = 300V VCE = 480V
TJ= 25C TJ= 125C 0 2 4 6 8 TJ= -55C 10 12 14 16
0
40
80
120
160
200 240 280
320
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
4
VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
5
GATE CHARGE (nC) FIGURE 4, Gate charge
3
IC = 124A IC = 62A
4 IC = 124A IC = 62A 2 IC = 31A 1
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
3
2
IC = 31A
1
0
6
8
10
12
14
16
0
0
25
50
75
100
125
150
VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage 1.10 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 1.05 1.00 0.95 0.90 0.85 0.80 0.75 -.50 -.25 IC, DC COLLECTOR CURRENT (A)
TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 250
200
150
50
0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE FIGURE 7, Threshold Voltage vs Junction Temperature
75 100 125 150 TC, Case Temperature (C) FIGURE 8, DC Collector Current vs Case Temperature
0
25
50
052-6329 Rev B 2 - 2009
100
Typical Performance Curves
40 td(OFF), TURN-OFF DELAY TIME (ns)
VCE = 400V TJ = 25C, or 125C RG = 4.7 L = 100H
APT102GA60B2_L
300 250
VGE =15V,TJ=125C
td(ON), TURN-ON DELAY TIME (ns)
35
VGE = 15V
200 150 100 50 0
VCE = 400V RG = 4.7 L = 100H VGE =15V,TJ=25C
30
25
20
0
25
50
75
100
125
0
20
40
60
80
100
ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 100 RG = 4.7, L = 100H, VCE = 400V 80
ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 150 125
TJ = 125C, VGE = 15V
tr, RISE TIME (ns)
100 60 tr, FALL TIME (ns) 75
TJ = 25C, VGE = 15V
40
50 25
RG = 4.7, L = 100H, VCE = 400V
20
TJ = 25 or 125C,VGE = 15V
0
0
20
40
60
80
100
ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 8000 EOFF, TURN OFF ENERGY LOSS (J) Eon2, TURN ON ENERGY LOSS (J) 7000 6000 5000 4000 3000 2000 1000 0 25 50 75 100 125 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 15000 SWITCHING ENERGY LOSSES (J) 13500 12000 10500 9000 7500 6000 4500 3000 1500 0 0
Eon2,62A Eoff,62A Eon2,31A Eoff,31A
V = 400V CE = +15V V GE T = 125C
J
0 25 50 75 100 125 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 5000 4500 4000 3500 3000 2500 2000 1500 1000 500 0 25 50 75 100 125 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 14, Turn-Off Energy Loss vs Collector Current 8000 SWITCHING ENERGY LOSSES (J)
V = 400V CE = +15V V GE R = 10
G
0
V = 400V CE V = +15V GE R =4.7
G
V = 400V CE V = +15V GE R = 4.7
G
TJ = 125C
TJ = 125C
TJ = 25C
TJ = 25C
0
0
Eon2,124A
Eon2,124A
7000 6000 5000 4000 3000 2000 1000 0
Eoff,124A
Eoff124A
052-6329 Rev B 2 - 2009
Eon2,62A Eoff,62A Eon2,31A Eoff,31A
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs Gate Resistance
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
Typical Performance Curves
10000 1000
APT102GA60B2_L
C, CAPACITANCE (pF)
Cies 1000
IC, COLLECTOR CURRENT (A)
100
10
100
Coes
1
Cres 10
0 100 200 300 400 500 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
0.1
1
10
100
1000
VCE, COLLECTOR-TO-EMITTER VOLTAGE FIGURE 18, Minimum Switching Safe Operating Area
0.18 ZJC, THERMAL IMPEDANCE (C/W) 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 10-5 0.1 0.05 10-4 SINGLE PULSE 10-3 10-2 0.5
Note:
D = 0.9
0.7
PDM
0.3
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
0.1
1
RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
TJ (C)
TC (C)
Dissipated Power (Watts)
.01136
.48575
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
ZEXT
.03899
.12064
052-6329 Rev B 2 - 2009
APT102GA60B_L
10% Gate Voltage td(on) 90% TJ = 125C Collector Current tr
V CC IC V CE
APT30DQ60
5%
10%
5%
Collector Voltage
Switching Energy
A D.U.T.
Figure 20, Inductive Switching Test Circuit
Figure 21, Turn-on Switching Waveforms and Definitions
90% td(off)
TJ = 125C Gate Voltage
Collector Voltage tf 10%
0
Collector Current
Switching Energy
Figure 22, Turn-off Switching Waveforms and Definitions
T-MAXTM (B2) Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
TO-264 (L) Package Outline
4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244)
Collector
20.80 (.819) 21.46 (.845)
Collector
25.48 (1.003) 26.49 (1.043)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842)
2.29 (.090) 2.69 (.106)
19.81 (.780) 20.32 (.800)
1.01 (.040) 1.40 (.055)
Gate Collector Emitter
0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118)
Gate Collector Emitter
052-6329 Rev B 2 - 2009
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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